29 Feb 2012

Kilopass First to Demonstrate Antifuse Reliability Data in 28nm HKMG

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Santa Clara, Calif. – February 29, 2012 – Kilopass Technology Inc., a leading provider of semiconductor logic non-volatile memory (NVM) intellectual property (IP), today announced that it is the first non-volatile memory (NVM) IP provider to demonstrate antifuse reliability in 28nm High-K Metal Gate (HKMG).  Kilopass has successfully completed 500 hours of High Temperature Operating Life (HTOL) and 500 hours of High Temperature Storage life (HTSL) per JEDEC 47 standard qualification with no failures. The remaining 500 hours will be completed by end of March 2012.

“We are extremely pleased with the reliability results on 2T antifuse silicon in 28nm HKMG,” said Lee Cleveland, VP of Engineering at Kilopass.  “The product testchip in qualification contains a variety of XPM macros up to 128Kb. The silicon results show that the reliability of Kilopass’ 2T technology in HKMG exhibits the same robustness we have seen in the poly-SiON processes. The high voltage and charge pump circuits implemented in 1.8V are meeting performance requirements. In addition, the memory distribution is very tight and programming yield is very high.”

Kilopass embedded NVM at HKMG continues to be implemented in standard CMOS without any additional backend process steps. The cost savings of Kilopass embedded NVM solutions in HKMG continue to increase with area scaling. Due to customer demand, Kilopass has taped out a follow-on 28nm HKMG product testchip with inclusion of Gusto and Itera. Gusto provides storage in blocks from 256Kb to 1Mb that can be tiled to build larger capacities. Itera provides storage in blocks from 128b to 1Mb with up to 1000 cycles of sector re-write. These products will complete qualification by the end of 2012.